| 圖片 |
產品資訊 |
詢價 |
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| Description | 濱松_APD optimized for Infrared Low Bias Voltage type | | λP(nm) | 800nm | | △θ(deg) | |
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| Description | 光電二極管模塊 | | λP(nm) | 190-1100nm | | △θ(deg) | |
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| Description | 濱松_光接收二極體 | | λP(nm) | 800nm | | Vr | 10V |
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| Description | Si PIN Photodiode | | λP(nm) | 320-1100nm | | △θ(deg) | |
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| Description | 濱松_S7686 Si Photodiode | | λP(nm) | | | △θ(deg) | |
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| Description | Si PIN Photodiode | | λP(nm) | 320-1100nm | | △θ(deg) | |
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| Description | 濱松_Si photodiode | | λP(nm) | 720nm | | Vr | 5V |
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| Description | HAMAMATSU_APD Module | | λP(nm) | 620nm | | △θ(deg) | |
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| Description | 濱松_Photo IC Diode | | λP(nm) | 560nm | | Vr | 5V |
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| Description | 濱松_Si APD(雪崩光電二極管) | | λP(nm) | 800nm | | Vr | 150 V |
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